发明名称 |
METHOD AND SYSTEM FOR COMBINING PHOTOMASKS TO FORM SEMICONDUCTOR DEVICES |
摘要 |
A photomask set includes at least two masks that combine to form a device pattern in a semiconductor device. Orthogonal corners may be produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask. The mask set may include a first mask with compensation features and a second mask with void areas overlaying the compensation features when the first and second masks are aligned with one another, such that the compensation features are removed when patterns are successfully formed from the first and second masks. The compensation features alleviate proximity effects during the formation of device features.
|
申请公布号 |
US2011006401(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100886391 |
申请日期 |
2010.09.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN KUEI SHUN;LIN CHIN-HSIANG;CHIU CHIH-CHENG |
分类号 |
H01L29/02;G03C5/00;G03F1/14;G03F7/20;G03F9/00;H01L21/469 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|