发明名称 |
Monolithische Halbleiterschalter und Verfahren zu ihrer Herstellung |
摘要 |
One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at least one contact area at a first side of one semiconductor die, respectively. The other one of source/drain of the first FET, a gate of the first FET, the other one of source/drain of the second FET and the gate of the second FET are electrically coupled to contact areas at a second side of the one semiconductor die opposite to the first side, respectively. The contact areas of the other one of source/drain of the first FET, of the gate of the first FET, of the other one of source/drain of the second FET and of the gate of the second FET are electrically separated from each other, respectively. |
申请公布号 |
DE102010000208(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
DE20101000208 |
申请日期 |
2010.01.26 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HAEBERLEN, OLIVER;RIEGER, WALTER;GOERGENS, LUTZ;POELZL, MARTIN;SCHOISWOHL, JOHANNES;KRUMREY, JOACHIM |
分类号 |
H01L27/085;H01L21/8232 |
主分类号 |
H01L27/085 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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