| 摘要 |
A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; wherein the light absorbing layer includes the first sub-layer and the second sub-layer, the first sub-layer including hydrogenated micro-crystalline silicon germanium (μc-SiGe:H) and an amorphous silicon germanium network (a-SiGe:H) formed among the hydrogenated micro-crystalline silicon germaniums, the second sub-layer including hydrogenated micro-crystalline silicon (μc-Si:H) and an amorphous silicon network (a-Si:H) formed among the hydrogenated micro-crystalline silicons.
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