发明名称 |
METHOD FOR TRANSFERRING AN EPITAXIAL LAYER |
摘要 |
A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.
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申请公布号 |
US2011008948(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20080528573 |
申请日期 |
2008.04.15 |
申请人 |
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES PARCTECHNOLOGIQUE DES FONTAINES |
发明人 |
LE VAILLANT YVES-MATTHIEU |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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