发明名称 METHOD FOR TRANSFERRING AN EPITAXIAL LAYER
摘要 A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.
申请公布号 US2011008948(A1) 申请公布日期 2011.01.13
申请号 US20080528573 申请日期 2008.04.15
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES PARCTECHNOLOGIQUE DES FONTAINES 发明人 LE VAILLANT YVES-MATTHIEU
分类号 H01L21/762 主分类号 H01L21/762
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