THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THEREOF

摘要

PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to improve the electric characteristics including an oxide active layer pattern by forming a protection layer which excludes hydrogen. CONSTITUTION: Gate wires(22,26) are formed on an insulation substrate(10), and oxide active patterns(42,44) are formed in the gate wires. Data wires(62,65,66,67) cross the gate wires on the oxide active pattern layer. A protection layer(70) is formed between the oxide active pattern and the data wires.