| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for programming a nonvolatile memory device, capable of shortening total programming time by reducing the number of program verifying times.SOLUTION: The method for programming the nonvolatile memory device, which programs a memory cell so as to be included within one of first and second threshold voltage distributions includes an initial data setting step of inputting data for programming inhibition to a first latch of a page buffer to which memory cells to be programmed with a second threshold voltage distribution are coupled, a first program and verification step of performing program and verification operations, a first data setting step of, when a program pulse is supplied more than N times (where N is a natural number of 1 or more), inputting data for performing a program operation to the first latch of the page buffer to which the memory cells to be programmed with the second threshold voltage distribution are coupled, and a second program and verification step of performing program and verification operations. |
