| 摘要 |
PROBLEM TO BE SOLVED: To provide a vicinal gallium nitride substrate which is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.SOLUTION: The GaN substrate includes a (0001) surface offcut from the <0001> direction toward a direction selected from the group consisting of Direction (1) or Direction (2), at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μmAFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm. The substrate may be formed by offcut slicing, offcut lapping or growth on a vicinal heteroepitaxial substrate. |
