发明名称 |
POLISHING COMPOSITION AND POLISHING METHOD |
摘要 |
To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: wherein R is a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group or a carboxylic acid group.
|
申请公布号 |
US2011008965(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100859793 |
申请日期 |
2010.08.20 |
申请人 |
ASAHI GLASS COMPANY LIMITED;SEIMI CHEMICAL CO., LTD. |
发明人 |
TAKEMIYA SATOSHI;SHINMARU SACHIE |
分类号 |
H01L21/463;B24B37/00;C09K3/14;C09K13/00;H01L21/304;H01L21/3105;H01L21/321;H01L21/465 |
主分类号 |
H01L21/463 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|