发明名称 CORRECTING FOR OVER PROGRAMMING NON-VOLATILE STORAGE
摘要 A non-volatile storage system corrects over programmed memory cells by selectively performing one or more erase operations on a subset of non-volatile storage elements that are connected to a common word line (or other type of control line).
申请公布号 US2011007569(A1) 申请公布日期 2011.01.13
申请号 US20100877383 申请日期 2010.09.08
申请人 LUTZE JEFFREY W;LI YAN 发明人 LUTZE JEFFREY W.;LI YAN
分类号 G11C16/04 主分类号 G11C16/04
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