发明名称 ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUITS, INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR FORMING THE ESD PROTECTION CIRCUITS
摘要 An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad is provided. The ESD protection circuit includes a first field oxide device coupled between a first terminal that is capable of providing a first supply voltage and the I/O pad. The first field oxide device includes a drain end having a first type of dopant and a source end having the first type of dopant. The first field oxide device includes a first doped region having a second type of dopant disposed adjacent to the drain end of the first field oxide device and a second doped region having the second type of dopant disposed adjacent to the source end of the first field oxide device.
申请公布号 US2011006342(A1) 申请公布日期 2011.01.13
申请号 US20100766186 申请日期 2010.04.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE SHU-CHUAN;CHEN KUO-JI;MA WADE
分类号 H01L29/73;H01L21/331 主分类号 H01L29/73
代理机构 代理人
主权项
地址