发明名称 |
ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUITS, INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR FORMING THE ESD PROTECTION CIRCUITS |
摘要 |
An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad is provided. The ESD protection circuit includes a first field oxide device coupled between a first terminal that is capable of providing a first supply voltage and the I/O pad. The first field oxide device includes a drain end having a first type of dopant and a source end having the first type of dopant. The first field oxide device includes a first doped region having a second type of dopant disposed adjacent to the drain end of the first field oxide device and a second doped region having the second type of dopant disposed adjacent to the source end of the first field oxide device.
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申请公布号 |
US2011006342(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100766186 |
申请日期 |
2010.04.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE SHU-CHUAN;CHEN KUO-JI;MA WADE |
分类号 |
H01L29/73;H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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