发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE, OPTICAL MODULE, TRANSMITTER, AND OPTICAL COMMUNICATION SYSTEM |
摘要 |
A semiconductor light-emitting device includes a GaAs substrate; and an active layer provided over the GaAs substrate, the active layer including: a lower barrier layer lattice-matched to the GaAs substrate; a quantum dot provided on the lower barrier layer; a strain relaxation layer covering a side of the quantum dot; and an upper barrier layer contacting the top of the quantum dot, at least a portion of the upper barrier layer contacting the top of the quantum dot being lattice-matched to the GaAs substrate, and having a band gap larger than a band gap of the quantum dot and smaller than a band gap of GaAs.
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申请公布号 |
US2011006282(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100877624 |
申请日期 |
2010.09.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
HATORI NOBUAKI;YAMAMOTO TSUYOSHI |
分类号 |
H01L33/06 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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