SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a semiconductor device having structure that prevents the generation of voids in an element isolation film of a fin transistor.SOLUTION: The semiconductor device includes a silicon substrate 100 having a first reference plane 103 and a second reference plane 104 provided at a position higher than the first reference plane 103. Each fin 121 and each fin 122 are formed on the silicon substrate 100. The respective fins constitute each fin transistor and are mutually spaced apart at intervals with upper surfaces located at a position higher than a second reference plane 104. A first element isolation film 131A is formed on the first reference plane 103 so that its upper surface is located at a position lower than upper surfaces of the fins 121 and the fins 122. The interval between the two fins 121 adjacent to each other across the first reference plane 103 is larger those between the two fins 122 adjacent to each other across the second reference plane 104.