| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for achieving a bipolar transistor by improving a maximum allowable voltage of an output voltage with respect to a field-effect transistor formed in a semiconductor thin film on an insulating substrate, and an integrated circuit thereof.SOLUTION: A body contact region is sandwiched between source regions in order to achieve a larger maximum allowable voltage with small area. The body contact region and source regions are connected through a conductive thin film or a junction of a low resistance. There is provided a constitution of the transistor consisting of: a drain region and source regions, and a first gate and a body contact region; and a part where first conductivity type second regions are provided side by side, that are a second gate, and source regions and a drain region. Thus, the bipolar transistor having a large channel width is achieved, and there is provided the transistor which can operate with both positive and negative potentials in relation to a conventional body potential, with this constitution. |
