| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide monocrystalline substrate for preventing the occurrence of a crystal defect on an epitaxially grown semiconductor layer caused by the substrate, and a method of manufacturing the substrate.SOLUTION: The method of manufacturing the silicon carbide monocrystalline substrate includes: a process (A) of preparing a silicon carbide monocrystalline substrate having a main surface that is mechanically polished; a process (B) of chemically mechanically polishing the main surface of the silicon carbide monocrystalline substrate; and a process (C) of evaluating an alteration layer that is formed by the chemical mechanical polishing by spectral ellipsometry. |
