发明名称 Low Activation Energy Photoresist Composition and Process for Its Use
摘要 The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
申请公布号 US2011008727(A1) 申请公布日期 2011.01.13
申请号 US20080253072 申请日期 2008.10.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ALLEN ROBERT DAVID;DIPIETRO RICHARD ANTHONY;SOORIYAKUMARAN RATNAM;TRUONG HOA D.
分类号 G03F7/20;C08F24/00;C08F32/08;G03F7/004 主分类号 G03F7/20
代理机构 代理人
主权项
地址