Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
申请公布号
WO2010118109(A3)
申请公布日期
2011.01.13
申请号
WO2010US30205
申请日期
2010.04.07
申请人
MICRON TECHNOLOGY, INC.;SRINIVASAN, BHASKAR;ANTONOV, VASSIL;SMYTHE, JOHN