| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a level difference at a wafer edge part, an undesired coating on an edge region, or an undesired increase in thickness of the edge region.SOLUTION: The problem is solved by a method of partially polishing one surface of the semiconductor wafer in which: the semiconductor wafer is pressed against a polishing pad positioned on a polishing plate and containing fixed abrasive grains; a polishing head is provided together with an elastic membrane and is radially subdivided into a plurality of chambers by gas or liquid cushions; a different polishing pressure exerted is selected for each chamber; the semiconductor wafer is held in a predetermined position by a retainer ring; an abrasive is introduced between the semiconductor wafer and the polishing pad; and the polishing pressure of the polishing head and the application pressure of the retainer ring to be exerted onto the semiconductor wafer in a chamber positioned in the edge region of the semiconductor wafer, are selected to essentially remove the material only from the edge part of the semiconductor wafer. |
