| 摘要 |
PROBLEM TO BE SOLVED: To provide a protective film material small in deterioration by oxidation as an end face protective film, and a structure of a protective film.SOLUTION: In this nitride semiconductor laser 1 including a multilayer film of a nitride semiconductor including a luminescent layer, the multilayer film has at least two cleavage end faces being resonator surfaces of the laser; a light emitting surface for emitting laser light out of the cleavage end face is covered with at least three protective films laminated in the order of a first protective film 113, a second protective film 114 and a third protective film 115 from the light emitting surface side; the first protective film is a crystalline thin film formed of aluminum nitride; the second protective film is formed of aluminum nitride containing Si; and the third protective film is formed of amorphous oxynitride. |
