| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of achieving an SBSI (separation by bonding silicon island) device having improved electron mobility, and the semiconductor device.SOLUTION: The method for manufacturing the semiconductor device includes a step of forming a first SiGe film on an Si substrate 1, a step of forming an Si film 3 thereon, a step of etching the Si film 3 and the first SiGe film to form an island-like structure and forming a first groove, a step of forming an insulating film on the bottom of first groove and the upper surface and side surfaces of the island-like structure, a step of forming a gap between the side surface of the island-like structure exposed by etching a portion of the insulating film which covers the side surface of the island-like structure and a portion of the insulating film which covers the first groove bottom surface, a step of forming a second SiGe film in the gap, a step of forming a support 10 from the inside of the first groove to the island-like structure, a step of forming a second groove for exposing the first and second SiGe films, a step of executing etching via the second groove to form a cavity portion from the immediately below portion of the Si film 3 to the side surfaces, and a step of forming an oxide film from the Si film 3 and the Si substrate 1. |
