| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a plurality of transistors having different threshold voltages reduced in variation, and a method of manufacturing the same.SOLUTION: The semiconductor device comprises a low threshold voltage MISFET 10 having a gate insulating film 11 formed on a semiconductor substrate 2, and comprising a high-dielectric constant material as a base material, a gate electrode 12, and an offset spacer 13 which is composed of an insulating material with SiN as a main component formed to contact with the gate insulating film 11, and a high threshold voltage MISFET 20 having a gate insulating film 21 formed on the semiconductor substrate 2, and comprising the high-dielectric constant material, a gate electrode 22, and an offset spacer 23 which is composed of the insulating material with SiN as the main component formed to contact with the gate insulating film 21. At least one of an abundance ratio of Si-H bond to N-H bond per unit volume, an amount of Cl per unit volume and an amount of H per unit volume of the offset spacer 23 is larger than that of the offset spacer 13. |
