发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A SRAM SECTION AND A LOGIC CIRCUIT SECTION |
摘要 |
A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode.
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申请公布号 |
US2011006374(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100886036 |
申请日期 |
2010.09.20 |
申请人 |
PANASONIC CORPORATION |
发明人 |
TAMAKI TOKUHIKO;KOTANI NAOKI;TAKEOKA SHINJI |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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