发明名称 |
Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentrations |
摘要 |
A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type overlying the semiconductor substrate and laterally adjoining the first well region; a gate dielectric extending from over the first well region to over the second well region; a drain region in the second well region; a source region on an opposite side of the gate dielectric than the drain region; and a gate electrode on the gate dielectric. The gate electrode includes a first portion directly over the second well region, and a second portion directly over the first well region. The first portion has a first impurity concentration lower than a second impurity concentration of the second portion.
|
申请公布号 |
US2011008944(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100879777 |
申请日期 |
2010.09.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SU RU-YI;CHIANG PUO-YU;GONG JENG;HUANG TSUNG-YI;TSAI CHUN-LIN;CHOU CHIEN-CHIH |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|