发明名称 |
METHOD FOR FORMING INTEGRATED CIRCUIT STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a back interconnect structure of an integrated circuit and a method of manufacturing the same.SOLUTION: The method for forming the integrated circuit structure includes a step to provide a semiconductor wafer containing a first notch extending from an edge of the semiconductor into the inside of the semiconductor wafer, and a step to dispose a carrier wafer containing a second notch on the semiconductor wafer. In the step to dispose the carrier wafer, at least a part of the first notch is superposed on at least a part of the second notch. |
申请公布号 |
JP2011009750(A) |
申请公布日期 |
2011.01.13 |
申请号 |
JP20100145180 |
申请日期 |
2010.06.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
HUANG HON-LIN;HSIAO CHIN-WEN;HSU KUO-CHING;CHEN CHEN-SHIEN |
分类号 |
H01L21/02;H01L21/3205;H01L21/683;H01L23/12;H01L23/52;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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