SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To peel off a nitride semiconductor device layer from a substrate in a manner that the nitride semiconductor device layer may not be etched.SOLUTION: The method of manufacturing a semiconductor device includes: a step to form an etching sacrificial layer 13 on a substrate 12; a step to form an etching stopper layer 2 on the etching sacrificial layer 13; a step to form a nitride semiconductor device layer 1 on the etching stopper layer 2; and a step to remove the etching sacrificial layer 13 by photoelectrochemical etching. The etching stopper layer 2 is a layer to prevent holes from accumulating in the nitride semiconductor device layer 1.