| 摘要 |
PROBLEM TO BE SOLVED: To efficiently inspect electric characteristics of through electrodes by electrically connecting one of a pair of terminals of an inspecting instrument to a first through electrode and the other to a second through electrode.SOLUTION: A method of manufacturing a semiconductor device 2 includes a step of forming an electrical circuit including a semiconductor element in a silicon substrate 20, a step of forming the first through electrode 22 provided through the silicon substrate 20 and electrically connected with the electrical circuit, a step of forming the second through electrode 23 provided through the silicon substrate 20 and short-circuiting with the first through electrode 22 on a surface 20a of the silicon substrate 20, and a step of inspecting the electric characteristics between the first through electrode 22 and the second through electrode 23 on a backside 20b of the silicon substrate 20. |
