| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer etching method that effectively removes Cu together with a wafer surface layer by etching while preventing diffusion of metal impurities such as Cu or the like from the wafer surface layer to a bulk part when etching a silicon wafer.SOLUTION: The silicon wafer etching method is a method for etching a silicon wafer by using a mixed acid while maintaining a temperature range of 0-10°C. Alternatively, the silicon wafer etching method is a method for etching a silicon wafer in such a manner that, when etching a silicon wafer by using a mixed acid, etching is executed by adjusting the temperature such that a value obtained by adding a processing strain depth of a silicon wafer and a diffusion length of Cu in the silicon wafer during etching is smaller than or equal to an etching margin. |
