METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer capable of achieving the high-quality crystal growth of a single crystal nitride semiconductor while using a lattice mismatch substrate.SOLUTION: The manufacturing method includes a step for forming a graphene layer 110 on the surface of a semiconductor substrate 101, a step for making the center of a honeycomb structure indicative of the arrangement of carbon atoms of the graphene layer 110 adsorb one element constituting a crystal of the single crystal semiconductor layer, a step for bonding the other element different from one element constituting the crystal to one element to form a first layer 114 of the crystal, and a step for further progressing the crystal growth of a predetermined number of crystal semiconductor layers on the surface of the first layer.