Controlling current or mitigating electromagnetic or radiation interference effects using multiple and different semi-conductive channel regions generating structures

摘要

Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using multiple different semi-conductive channel regions generating structures formed by multiple different semi-conductive electrical current or voltage control structures. One embodiment includes providing a first and second metal oxide semiconductor field effect transistor (MOSFET) sections formed on opposite sides of a junction field effect transistor (JFET) such that operation of the JFET modulates or controls current otherwise controlled by an electrical path of the MOSFET sections. A control system for determining when an embodiment of the invention is to be operated is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as highvoltage radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

主权项

1. An electrical system comprising:
a substrate formed having a first, second, and third section, wherein said first and third section are located on opposing sides of said second section; a first and second metal oxide semi-conductor field effect transistor (MOSFET) sections each respectively disposed in said first and third substrate sections, each said first and second MOSFET sections comprising a first and second portion each comprising a first MOSFET first section, a body region formed into said first section, a source region formed into the first section inside said body region, a drain region formed outside of said body region, a gate insulator region formed over the first MOSFET section between said source and a substrate section covering the body region, and a control gate formed over said gate insulator region; and a monolithic junction field effect transistor (JFET) section disposed into said second section of said substrate comprising an opposite dopant of said substrate placed in between two adjacent body regions comprising a neck region but not in contact with either body region.