METHOD OF GAP FILLING IN A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gap-filling method of a semiconductor device is provided to simultaneously implement the deposition process and the etching process of an insulating film by simultaneously receiving etching gas radial and gaseous deposition gas. CONSTITUTION: A plurality of patterns is formed on a substrate(10). A pad oxide film(20) and a pad nitride film(30) are formed on the upper side of the substrate. Parts of the pad nitride film and the oxide film are etched and parts of the substrate are etched to form a trench. A gap-filling insulating film(50) is deposited between the patterns. The trench is filled with the gap-filling insulating film.