SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin-film transistor which uses an oxide semiconductor layer and whose electrical characteristics are stabilized by reducing contact resistance between the oxide semiconductor layer and a source electrode layer or a drain electrode layer, and to provide a method of manufacturing the thin-film transistor.SOLUTION: The thin-film transistor using an oxide semiconductor layer is formed by forming a buffer layer having higher conductivity than that of the oxide semiconductor layer on the oxide semiconductor layer and forming a source electrode layer and a drain electrode layer on the buffer layer so as to electrically connect the oxide semiconductor layer and the source electrode layer or the drain electrode layer via the buffer layer. By applying a reverse sputtering treatment and a heat treatment under nitrogen atmosphere to the buffer layer, the buffer layer having the higher conductivity than that of the oxide semiconductor layer can be formed.