| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces a decrease in breakdown voltage, the decrease being caused by a metal electrode to which a high voltage is applied.SOLUTION: An nembedded impurity region 2 is formed on an interface between an nsemiconductor layer 3 in a high-potential island region 101 and a psemiconductor substrate 1. Above the nembedded impurity region 2, a p-channel MOSFET 130 is formed on a surface of the nsemiconductor layer 3. A diode 102 having a pimpurity region 6 and an nimpurity region 45 is formed on the surface of the nsemiconductor layer 3 in a region 105. A metal electrode 14 connected to the nimpurity region 45 passes over the pimpurity region 6 and a pimpurity region 4 and is connected to the p-channel MOSFET 130. A pimpurity region 61 connected to the pimpurity region 6 is located below the metal electrode 14. A potential applied to the psemiconductor substrate 1 and the pimpurity region 4 is lower than that of the pimpurity region 6 and the nimpurity region 45. |
