发明名称 |
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM |
摘要 |
In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
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申请公布号 |
US2011008621(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100827507 |
申请日期 |
2010.06.30 |
申请人 |
SCHUJMAN SANDRA B;RAO SHAILAJA P;BONDOKOV ROBERT T;MORGAN KENNETH E;SLACK GLEN A;SCHOWALTER LEO J |
发明人 |
SCHUJMAN SANDRA B.;RAO SHAILAJA P.;BONDOKOV ROBERT T.;MORGAN KENNETH E.;SLACK GLEN A.;SCHOWALTER LEO J. |
分类号 |
C30B23/00;C01F7/00 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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