发明名称 FIELD EFFECT TRANSISTOR
摘要 <p>A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.</p>
申请公布号 KR20110004356(A) 申请公布日期 2011.01.13
申请号 KR20107016531 申请日期 2009.02.13
申请人 VISHAY-SILICONIX 发明人 XU ROBERT
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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