发明名称 Plasma process method
摘要 A plasma process method of processing an object to be processed by a plasma process while enabling cooling of an inside of a plasma apparatus by taking in and exhausting a gas to evacuate an atmosphere of the inside includes measuring a temperature of the atmosphere of the inside of the plasma process apparatus while the plasma is not generated; and stopping taking the gas into the inside of the plasma process apparatus during the plasma process in a case where the measured temperature is lower than a first preset threshold temperature when the atmosphere is evacuated at a preset volumetric flow rate.
申请公布号 US9447926(B2) 申请公布日期 2016.09.20
申请号 US201414176237 申请日期 2014.02.10
申请人 Tokyo Electron Limited 发明人 Onodera Naomi;Gokon Kiyohiko;Sato Jun
分类号 C23C16/50;C23C16/509;F17D3/01;C23C16/40;C23C16/52;H01L21/67 主分类号 C23C16/50
代理机构 IPUSA, PLLC 代理人 IPUSA, PLLC
主权项 1. A plasma process method of processing an object to be processed by a plasma process apparatus by a plasma process while enabling cooling of an inside of a plasma apparatus by taking in and exhausting a gas to evacuate an atmosphere of the inside, the plasma process apparatus comprising: a processing container, which is shaped like a cylinder and is configured to be evacuatable to vacuum;a holding unit configured to hold plural objects to be processed and inserted into and to be extracted from the processing container;a gas supplying unit configured to supply a gas into the processing container;an activating unit, which is located along a longitudinal direction of the processing container and is configured to activate the gas by plasma generated by a high frequency power, the activating unit including a plasma generating box which is subdivided by a plasma compartment wall provided along the longitudinal direction of the processing container,plasma electrodes provided along the longitudinal direction of the plasma compartment wall, anda high frequency power source connected to the plasma electrodes;a cylindrical shield cover configured to surround a periphery of the processing container and to be connected to ground for shielding from high frequency; anda cooling device that includes an exhaust header including an end plate, the end plate clogging an upper end face of the cylindrical shield cover, including cooling gas flow holes, and being made of metal having a shield function of shielding against high frequency, the cooling device being configured to cause a cooling gas to flow through a space between the cylindrical shield cover and the processing container during the plasma process,the plasma process method comprising:measuring a temperature of the atmosphere of the inside of the plasma process apparatus while the plasma is not generated; andcontrolling the cooling device to stop taking the gas into the inside of the plasma process apparatus during the plasma process in a case where the measured temperature is lower than a first preset threshold temperature when the atmosphere is evacuated at a preset volumetric flow rate.
地址 Tokyo JP