发明名称 HETERO-JUNCTION SILICON SOLAR CELL AND FABRICATION METHOD THEREOF
摘要 Disclosed are a hetero-junction silicon solar cell and a fabrication method thereof. The hetero-junction silicon solar cell according to the present invention forms a pn junction of a crystalline silicon substrate and a passivation layer doped with impurities so as to minimize a recombination of electrons and holes, making it possible to maximize efficiency of the hetero-junction silicon solar cell. The present invention provides a hetero-junction silicon solar cell comprising a crystalline silicon substrate and a passivation layer that is formed on the crystalline silicon substrate and is doped with impurities.
申请公布号 EP2198462(A4) 申请公布日期 2011.01.12
申请号 EP20080862900 申请日期 2008.12.17
申请人 LG ELECTRONICS INC. 发明人 KO, JI-HOON;EO, YOUNG-JOO;KIM, JIN-AH;YUN, JU-HWAN;JUNG, IL-HYOUNG;KIM, JONG-HWAN
分类号 H01L31/072;H01L31/18 主分类号 H01L31/072
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