| 摘要 |
<p>The present invention relates to a solid-state p-n heterojunction such as in a solar cell comprising an organic p-type material in contact with a porous layer of n-type material, characterised in that the thickness of the porous layer of n-type material is 2 µm or greater. The invention also relates to a solid-state p-n heterojunction such as in a solar cell comprising an organic p-type material in contact with a porous layer of n-type material, characterised in that the pore-filling-fraction of the porous layer of n-type material by the organic p-type material is no more than 50%. The invention further comprises devices such as solar cells or photodetector devices formed from such heterojunctions, methods of forming the same and the use of a polymeric p-type material in such a device or method.</p> |
