Light-emitting diode chip on a GaN basis and method for producing a light-emitting diode component with a light-emitting diode chip on a GaN basis

摘要

Radiation-emitting semiconductor element comprises a semiconductor body made from a stack of different III-V nitride semiconductor layers (1) and having a first main surface (3) and a second main surface (4). A part of the radiation produced is coupled out through the first main surface. A reflector (6) is applied to the second main surface. An independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The semiconductor layers consist of GaN, AlN, AAlGaN, InGaN, InAlN or AlInGaN. The reflector is formed by a mirroring metallic contact surface made from Ag, Al or a Ag-Al alloy.