METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE

摘要

The present invention provides a method for producing a silicon carbide substrate for forming a semiconductor layer by inclining the surface orientation of a major surface (1) of a substrate by 0.03 to 1° from the (0001) plane and performing hydrogen gas etching at 1250°C to 1700°C. Also disclosed is an SiC substrate, which has only a few spiral pits and is excellent in surface flatness.