Vertical metal oxide semiconductor field-effect diode

摘要

Semiconductor diodes having a low forward conduction voltage drop, a low reverse leakage current, a high voltage capability and avalanche energy capability, suitable for use in integrated circuits as well as for discrete devices are disclosed. The semiconductor diodes are diode configured vertical metal oxide semiconductor field effect devices formed using cylindrical semiconductor pedestals (304) on a surface of a semiconductor body and having one diode terminal (324) as the common connection between the gates (318) and drains (312) of the vertical metal oxide semiconductor field effect devices, and one diode terminal (330) as the common connection with the sources (314) of the vertical metal oxide semiconductor field effect devices. A layer (320) of opposite conductivity type to that of the semiconductor body is disposed below said surface of the semiconductor body between pedestals.