LATERAL JUNCTION FIELD EFFECT TRANSISTOR

摘要

On a p - epitaxial layer (3), an n-type epitaxial layer (4) and a gate region (5) are formed in this order. A gate electrode (12a) is electrically connected to the gate region (5), and a source electrode (12b) and a drain electrode (12c) are spaced apart from each other with the gate electrode (12a) sandwiched therebetween. A control electrode (12d) is used for applying to the p - epitaxial layer (3) a voltage that causes a reverse biased state of the p - epitaxial layer (3) and the n-type epitaxial layer (4) in an OFF operation.