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发明名称
Method for manufacturing an SOI transistor with ground plane and gate being self-aligned and with a buried oxide of varying thickness
摘要
申请公布号
EP2133919(B1)
申请公布日期
2011.01.12
申请号
EP20090162258
申请日期
2009.06.09
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES
发明人
FENOUILLET-BERANGER, CLAIRE;CORONEL, PHILIPPE
分类号
H01L29/786;H01L21/336
主分类号
H01L29/786
代理机构
代理人
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