NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m- plane 12, a semiconductor multilayer structure 20 that has been formed on the m -plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.