发明名称 |
BIPOLAR TRANSISTOR AND METHOD OF FABRICATING THE SAME |
摘要 |
Consistent with an example embodiment, there is a bipolar transistor with a reduced collector series resistance integrated in a trench of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region manufactured in one fabrication step, therefore having a shorter conductive path with a reduced collector series resistance, improving the high frequency performance of the bipolar transistor. The bipolar transistor further includes a base region with a first part on a selected portion of the collector region (6, 34), which is on the bottom of the trench, and an emitter region on a selected portion of the first part of the base region. A base contact electrically contacts the base region on a second part of the base region, which is on an insulating region. The collector region is electrically contacted on top of a protrusion with a collector contact. |
申请公布号 |
EP1842229(B1) |
申请公布日期 |
2011.01.12 |
申请号 |
EP20060701807 |
申请日期 |
2006.01.12 |
申请人 |
NXP B.V. |
发明人 |
DONKERS, JOHANNES, J., T., M.;VAN NOORT, WIBO, D.;MEUNIER-BEILLARD, PHILIPPE;NUTTINCK, SEBASTIEN;HIJZEN, ERWIN;NEUILLY, FRANCOIS |
分类号 |
H01L21/331;H01L29/732;H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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