发明名称 |
Methods of manufacturing semiconductor devices |
摘要 |
Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first interlayer dielectric layer may change a stress of the first interlayer dielectric layer. In particular, the first interlayer dielectric layer may have a tensile stress of 200 MPa or more after dehydrogenization. Semiconductor devices including dehydrogenated interlayer dielectric layers are also provided.
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申请公布号 |
US7867867(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20060593898 |
申请日期 |
2006.11.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG YONG-KUK;KIM ANDREW-TAE;SHIN DONG-SUK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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