发明名称 |
Localized masking for semiconductor structure development |
摘要 |
Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
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申请公布号 |
US7868369(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080276152 |
申请日期 |
2008.11.21 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YATES DONALD L.;MERCALDI GARRY A. |
分类号 |
H01L27/108;G03F7/00;G03F7/20;H01L21/02;H01L21/027;H01L21/3213 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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