发明名称 |
Process for manufacturing rounded polysilicon electrodes on semiconductor components |
摘要 |
A polysilicon layer provided for a polysilicon electrode (8) is patterned by means of a resist mask (5) and an auxiliary layer (4) made of a material that is suitable as an antireflection layer, the auxiliary layer (4) being provided with lateral hollowed-out recesses in such a way that the polysilicon electrode is formed with rounded edges (7) during etching. The auxiliary layer is preferably produced from a soluble material and with a thickness of 70 nm to 80 nm. A base layer (2) may be provided as a gate dielectric of memory cell transistors and additionally as an etching stop layer.
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申请公布号 |
US7867837(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20060795933 |
申请日期 |
2006.01.13 |
申请人 |
AUSTRIAMICROSYSTEMS AG |
发明人 |
BERMANN FRANZ;KOPPITSCH GUENTHER;SCHROETER SVEN |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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