发明名称 |
Spin-dependent tunnelling cell and method of formation thereof |
摘要 |
A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.
|
申请公布号 |
US7867788(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080067585 |
申请日期 |
2008.03.20 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS);STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
BUTTET DE COME;HEHN MICHEL;ZOLL STEPHANE |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|