发明名称 |
Methods of fabricating semiconductor devices including elevated source and drain regions |
摘要 |
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided. |
申请公布号 |
US7867865(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080166575 |
申请日期 |
2008.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JIN-BUM;KIM YOUNG-PIL;WON JUNG-YUN;BAIK HION-SUCK;LEE JUN-HO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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