| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to minimize the bowing profile by removing the electron shielding effect by neutralizing the electrons remaining on the sidewall of the hard mask layer pattern which is used during M1C(Metal 1 Contact) etching process. CONSTITUTION: An inter-layer insulating film(35) is formed on a bottom wiring(34). A hard mask film pattern(36) is formed on the inter-layer insulating film. The sidewall of the hard mask film pattern is hydrogen-treated. A contact hole(39) is formed by etching the inter-layer insulating film with the hard mask film pattern as the etching barrier.
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