发明名称 |
Apparatus for producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor layer, method of producing group-III nitride semiconductor light-emitting device, group-III nitride semiconductor light-emitting device thereof, and lamp thereof |
摘要 |
An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof.
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申请公布号 |
US7867801(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080133010 |
申请日期 |
2008.06.04 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
YOKOYAMA YASUNORI;OKABE TAKEHIKO;MIKI HISAYUKI |
分类号 |
H01L21/00;H01L33/06;H01L33/12;H01L33/32;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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